Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Through Hole
- Vgsth Max Id
- 2.25V @ 250μA
- Avalanche Energy Rating Eas
- 60 mJ
- Recovery Time
- 24 ns
- Montaj Tipi
- Through Hole
- Current Continuous Drain Id25
- 87A Tc
- Pin Sayısı
- 3
- Drain To Source Breakdown Voltage
- 30V
- Seri
- HEXFET®
- Power Dissipation
- 79mW
- Ambalaj
- Tube
- Direnç
- 6.3MOhm
- Power Dissipation Max
- 79W Tc
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Obsolete
- Rise Time
- 41ns
- Radyasyon Dayanımı
- No
- Jedec95 Code
- TO-220AB
- Voltage Rated Dc
- 30V
- Yükseklik
- 8.763mm
- Element Configuration
- Single
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Gate To Source Voltage Vgs
- 20V
- Gate Charge Qg Max Vgs
- 26nC @ 4.5V
- Turn On Delay Time
- 13 ns
- Kılıf / Paket
- TO-220-3
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 16 Weeks
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Input Capacitance Ciss Max Vds
- 2130pF @ 15V
- Nominal Vgs
- 20 V
- Threshold Voltage
- 2.25V
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Uzunluk
- 10.5156mm
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