IRF3707ZSTRLPBF

Specifications

Qualification Status

Not Qualified

Rds On Max Id Vgs

9.5m Ω @ 21A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Ds Breakdown Voltagemin

30V

Fet Type

N-Channel

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Continuous Drain Current Id

59A

Yayın Yılı

2003

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection

DRAIN

Gate Charge Qg Max Vgs

15nC @ 4.5V

Pulsed Drain Currentmax Idm

230A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Currentmax Abs Id

42A

Terminal Formu

GULL WING

Montaj

Surface Mount

Avalanche Energy Rating Eas

40 mJ

Vgsth Max Id

2.25V @ 25μA

Montaj Tipi

Surface Mount

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

30

Current Continuous Drain Id25

59A Tc

Fabrika Tedarik Süresi

15 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Seri

HEXFET®, StrongIRFET™

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Input Capacitance Ciss Max Vds

1210pF @ 15V

Direnç

9.5mOhm

Power Dissipation Max

57W Tc

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)