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IRF3703PBF

Infineon Technologies

IRF3703PBF

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Kılıf / Paket
TO-220-3
Turn On Delay Time
18 ns
Gate Charge Qg Max Vgs
209nC @ 10V
Gate To Source Voltage Vgs
20V
Drive Voltage Max Rds On Min Rds On
7V 10V
Operating Mode
ENHANCEMENT MODE
Element Configuration
Single
Reach Svhc
No SVHC
Contact Plating
Tin
Yükseklik
15.24mm
Voltage Rated Dc
30V
Radyasyon Dayanımı
No
Jedec95 Code
TO-220AB
Rise Time
123ns
RoHS Durumu
ROHS3 Compliant
Kurşunsuz
Lead Free
Parça Durumu
Active
Power Dissipation Max
3.8W Ta 230W Tc
Direnç
2.8Ohm
Ambalaj
Tube
Power Dissipation
230W
Drain To Source Breakdown Voltage
30V
Seri
HEXFET®
Tepe Reflow Süresi (maks. sn)
30
Current Continuous Drain Id25
210A Tc
Pin Sayısı
3
Montaj Tipi
Through Hole
Montaj
Through Hole
Vgsth Max Id
4V @ 250μA
Drain Currentmax Abs Id
75A
Case Connection
DRAIN
Fall Time Typ
24 ns
Continuous Drain Current Id
210A
Yayın Yılı
2004
Genişlik
4.69mm
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Turn Off Delay Time
53 ns
Vgs Max
±20V
Fet Type
N-Channel
Tepe Reflow Sıcaklığı (°C)
250

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