IRF3610SPBF

Specifications

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time

15 ns

Gate Charge Qg Max Vgs

150nC @ 10V

Gate To Source Voltage Vgs

20V

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Fall Time Typ

43 ns

Drive Voltage Max Rds On Min Rds On

10V

Yayın Yılı

2013

Continuous Drain Current Id

103A

Drain To Source Voltage Vdss

100V

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

77 ns

Reach Svhc

No SVHC

Fet Type

N-Channel

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

11.6m Ω @ 62A, 10V

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

55ns

Parça Durumu

Discontinued

Terminal Sayısı

2

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

333W Tc

Transistor Element Material

SILICON

Nominal Vgs

4 V

Input Capacitance Ciss Max Vds

5380pF @ 25V

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation

333W

Seri

HEXFET®

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Pin Sayısı

3