Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Breakdown Voltage
- 150V
- Seri
- HEXFET®
- Terminal
- Through Hole
- Ambalaj
- Tube
- Power Dissipation
- 136W
- Montaj
- Through Hole
- Vgsth Max Id
- 4V @ 250μA
- Current Continuous Drain Id25
- 23A Tc
- Pin Sayısı
- 3
- Recovery Time
- 260 ns
- Montaj Tipi
- Through Hole
- Rise Time
- 32ns
- Voltage Rated Dc
- 150V
- Radyasyon Dayanımı
- No
- Jedec95 Code
- TO-220AB
- Direnç
- 82mOhm
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Contains Lead, Lead Free
- Parça Durumu
- Not For New Designs
- Power Dissipation Max
- 94W Tc
- Element Configuration
- Single
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 8.77mm
- Gate Charge Qg Max Vgs
- 95nC @ 10V
- Kılıf / Paket
- TO-220-3
- Turn On Delay Time
- 9.6 ns
- Pulsed Drain Currentmax Idm
- 84A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 20V
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Dual Supply Voltage
- 150V
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 14 Weeks
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Uzunluk
- 10.54mm
- Nominal Vgs
- 4 V
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