IRF3007PBF

Specifications

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

10.668mm

Jesd30 Code

R-PSSO-G2

Nominal Vgs

4 V

Input Capacitance Ciss Max Vds

3270pF @ 25V

Terminal Sayısı

2

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~175°C TJ

Dual Supply Voltage

75V

Terminal Formu

GULL WING

Number Of Elements

1

Fabrika Tedarik Süresi

14 Weeks

Continuous Drain Current Id

75A

Yayın Yılı

2002

Genişlik

4.826mm

Case Connection

DRAIN

Fall Time Typ

49 ns

Turn Off Delay Time

55 ns

Vgs Max

±20V

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Akım Değeri

80A

Rds On Max Id Vgs

12.6m Ω @ 48A, 10V

Rise Time

80ns

Voltage Rated Dc

75V

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

Direnç

12.6Ohm

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Not For New Designs

Power Dissipation Max

200W Tc

Drain To Source Breakdown Voltage

75V

Seri

HEXFET®

Ambalaj

Tube

Power Dissipation

200W

Montaj

Through Hole

Avalanche Energy Rating Eas

280 mJ