IRF2907ZSTRLPBF

Specifications

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

690 mJ

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Pin Sayısı

3

Current Continuous Drain Id25

160A Tc

Tepe Reflow Süresi (maks. sn)

30

Seri

HEXFET®

Drain To Source Breakdown Voltage

75V

Power Dissipation

300W

Ambalaj

Tape & Reel (TR)

Direnç

4.5MOhm

Power Dissipation Max

300W Tc

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Rise Time

140ns

Radyasyon Dayanımı

No

Yükseklik

4.826mm

Reach Svhc

No SVHC

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

270nC @ 10V

Pulsed Drain Currentmax Idm

680A

Turn On Delay Time

19 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

7500pF @ 25V

Threshold Voltage

4V

Transistor Element Material

SILICON

Terminal Sayısı

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Jesd30 Code

R-PSSO-G2