Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 2
- Tepe Reflow Sıcaklığı (°C)
- 260
- Direnç
- 7.4MOhm
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 75V
- Drain Currentmax Abs Id
- 89A
- Power Dissipation Max
- 170W Tc
- Input Capacitance Ciss Max Vds
- 3270pF @ 25V
- Gate To Source Voltage Vgs
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 4V @ 250μA
- Yayın Yılı
- 2004
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- 30
- Power Dissipation
- 170W
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Seri
- HEXFET®
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Jesd30 Code
- R-PSSO-G2
- Montaj
- Surface Mount
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 75A
- Uzunluk
- 10.668mm
- Rise Time
- 79ns
- Radyasyon Dayanımı
- No
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 75A Tc
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 12 Weeks
- Rds On Max Id Vgs
- 9.4m Ω @ 53A, 10V
- Vgs Max
- ±20V
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