Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 6450pF @ 25V
- Vgsth Max Id
- 4V @ 250μA
- Yayın Yılı
- 2003
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz
- Contains Lead
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Direnç
- 2MOhm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 2
- Power Dissipation Max
- 300W Tc
- Drain Currentmax Abs Id
- 270A
- Drain To Source Breakdown Voltage
- 40V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Threshold Voltage
- 4V
- Pin Sayısı
- 3
- Montaj Tipi
- Surface Mount
- Seri
- HEXFET®
- Avalanche Energy Rating Eas
- 540 mJ
- Power Dissipation
- 300W
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- 30
- Case Connection
- DRAIN
- Gate Charge Qg Max Vgs
- 240nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Recovery Time
- 84 ns
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 12 Weeks
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Akım Değeri
- 75A
- Current Continuous Drain Id25
- 75A Tc
- Transistor Application
- SWITCHING
- Montaj
- Surface Mount
- Jesd30 Code
- R-PSSO-G2
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Uzunluk
- 10.668mm
- Rise Time
- 120ns
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