IRF2804STRL7PP

Specifications

Input Capacitance Ciss Max Vds

6930pF @ 25V

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

4V @ 250μA

Yayın Yılı

2003

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

Direnç

1.6MOhm

Parça Durumu

Active

Drain To Source Breakdown Voltage

40V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

330W Tc

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Seri

HEXFET®

Pin Sayısı

7

Threshold Voltage

4V

Element Configuration

Single

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation

330W

Case Connection

DRAIN

Radyasyon Dayanımı

No

Recovery Time

65 ns

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

260nC @ 10V

Transistor Application

SWITCHING

Current Continuous Drain Id25

160A Tc

Nominal Vgs

4 V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Akım Değeri

160A

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PSSO-G6

Montaj

Surface Mount

Voltage Rated Dc

40V

Terminal Formu

GULL WING

Continuous Drain Current Id

320A