IRF250P224

Specifications

Number Of Elements

1

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

384A

Ds Breakdown Voltagemin

250V

Fet Type

N-Channel

Montaj Tipi

Through Hole

Drainsource On Resistancemax

0.012Ohm

Seri

StrongIRFET™

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-247AC

Rds On Max Id Vgs

12m Ω @ 58A, 10V

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

496 mJ

Kılıf / Paket

TO-247-3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

203nC @ 10V

Input Capacitance Ciss Max Vds

9915pF @ 50V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Current Continuous Drain Id25

96A Tc

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

NO

Transistor Application

SWITCHING

Vgsth Max Id

4V @ 270μA

Yayın Yılı

2013

Fabrika Tedarik Süresi

26 Weeks

ECCN Kodu

EAR99

Jesd30 Code

R-PSFM-T3

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

96A

Power Dissipation Max

313W Tc

Drain To Source Voltage Vdss

250V