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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 460 mJ
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- 30
- Power Dissipation
- 200W
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Threshold Voltage
- 4V
- Pin Sayısı
- 3
- Seri
- HEXFET®
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Not For New Designs
- Direnç
- 3.6mOhm
- Terminal Sayısı
- 2
- Tepe Reflow Sıcaklığı (°C)
- 260
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 40V
- Power Dissipation Max
- 200W Tc
- Drain Currentmax Abs Id
- 75A
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 5890pF @ 25V
- Yayın Yılı
- 2002
- Vgsth Max Id
- 4V @ 250μA
- Ambalaj
- Tube
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Genişlik
- 9.65mm
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time Typ
- 110 ns
- Reach Svhc
- No SVHC
- Rds On Max Id Vgs
- 3.6m Ω @ 130A, 10V
- Vgs Max
- ±20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 62 ns
- Fet Type
- N-Channel
- Number Of Elements
- 1
- Turn On Delay Time
- 15 ns
- Pulsed Drain Currentmax Idm
- 850A
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Yükseklik
- 4.572mm
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