IRF200P223

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Kılıf / Paket

TO-247-3

Avalanche Energy Rating Eas

541 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±20V

Rds On Max Id Vgs

11.5m Ω @ 60A, 10V

Terminal Pozisyonu

SINGLE

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-247AC

Seri

StrongIRFET™

Drainsource On Resistancemax

0.0115Ohm

Montaj Tipi

Through Hole

Ds Breakdown Voltagemin

200V

Fet Type

N-Channel

Transistor Element Material

SILICON

Number Of Elements

1

Pulsed Drain Currentmax Idm

400A

Drain To Source Voltage Vdss

200V

Power Dissipation Max

313W Tc

Drain Currentmax Abs Id

100A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Jesd30 Code

R-PSFM-T3

Çalışma Sıcaklığı

-55°C~175°C TJ

Fabrika Tedarik Süresi

26 Weeks

ECCN Kodu

EAR99

Vgsth Max Id

4V @ 270μA

Yayın Yılı

2013

Current Continuous Drain Id25

100A Tc

Ambalaj

Tube

Yüzey Montaj

NO

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

102nC @ 10V

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

5094pF @ 50V