IRF200P222

Specifications

Continuous Drain Current Id

182A

Power Dissipation Max

556W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

200V

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PSFM-T3

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

26 Weeks

Yayın Yılı

2013

Vgsth Max Id

4V @ 270μA

Ambalaj

Tube

Current Continuous Drain Id25

182A Tc

Transistor Application

SWITCHING

Yüzey Montaj

NO

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

203nC @ 10V

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

9820pF @ 50V

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

77 ns

Max Junction Temperature Tj

175°C

Case Connection

DRAIN

Kılıf / Paket

TO-247-3

Power Dissipation

556W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

6.6m Ω @ 82A, 10V

Vgs Max

±20V

Number Of Channels

1

Terminal Pozisyonu

SINGLE

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-247AC

Yükseklik

24.99mm

Montaj Tipi

Through Hole

Drainsource On Resistancemax

0.0066Ohm

Seri

StrongIRFET™

Fet Type

N-Channel