IRF1407STRLPBF

Specifications

Terminal

SMD/SMT

Power Dissipation

3.8W

Tepe Reflow Süresi (maks. sn)

30

Case Connection

DRAIN

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Seri

HEXFET®

Threshold Voltage

4V

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

2

Parça Durumu

Active

Direnç

7.8mOhm

Power Dissipation Max

3.8W Ta 200W Tc

Drain Currentmax Abs Id

75A

Drain To Source Breakdown Voltage

75V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

5600pF @ 25V

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2004

Vgsth Max Id

4V @ 250μA

Rds On Max Id Vgs

7.8m Ω @ 78A, 10V

Vgs Max

±20V

Reach Svhc

No SVHC

Terminal Pozisyonu

SINGLE

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Genişlik

9.65mm

Fall Time Typ

140 ns

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

150 ns

Turn On Delay Time

11 ns

Number Of Elements

1

Pulsed Drain Currentmax Idm

520A

Fet Type

N-Channel

Yükseklik

4.826mm

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier