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Specifications
- Pulsed Drain Currentmax Idm
- 680A
- Number Of Elements
- 1
- Turn On Delay Time
- 13 ns
- Fet Type
- N-Channel
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Yükseklik
- 5.084mm
- Number Of Channels
- 1
- Vgs Max
- ±20V
- Rds On Max Id Vgs
- 5.3m Ω @ 101A, 10V
- Fall Time Typ
- 110 ns
- Genişlik
- 9.65mm
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Junction Temperature Tj
- 175°C
- Turn Off Delay Time
- 130 ns
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Radyasyon Dayanımı
- No
- Recovery Time
- 130 ns
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 260nC @ 10V
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 131A Tc
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Akım Değeri
- 131A
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 12 Weeks
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Jesd30 Code
- R-PSSO-G2
- Montaj
- Surface Mount
- Voltage Rated Dc
- 55V
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 131A
- Uzunluk
- 10.668mm
- Rise Time
- 190ns
- Transistor Element Material
- SILICON
- Montaj Tipi
- Surface Mount
- Seri
- HEXFET®
- Pin Sayısı
- 3
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- 30
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