Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Direnç
- 4mOhm
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 3
- Power Dissipation Max
- 3.8W Ta 200W Tc
- Drain Currentmax Abs Id
- 75A
- Drain To Source Breakdown Voltage
- 40V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 7360pF @ 25V
- Gate To Source Voltage Vgs
- 20V
- Vgsth Max Id
- 4V @ 250μA
- Yayın Yılı
- 2004
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tube
- Power Dissipation
- 200W
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- 30
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Threshold Voltage
- 4V
- Montaj Tipi
- Through Hole
- Seri
- HEXFET®
- Montaj
- Through Hole
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Uzunluk
- 10.668mm
- Rise Time
- 140ns
- Continuous Drain Current Id
- 162A
- Voltage Rated Dc
- 40V
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 200nC @ 10V
- Radyasyon Dayanımı
- No
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Akım Değeri
- 162A
- Nominal Vgs
- 4 V
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 12 Weeks
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 162A Tc
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