IRF1010NPBF

Specifications

Power Dissipation

180W

Element Configuration

Single

Lead Pitch

2.54mm

Terminal

Through Hole

Avalanche Energy Rating Eas

250 mJ

Case Connection

DRAIN

Transistor Element Material

SILICON

Pin Sayısı

3

Threshold Voltage

4V

Montaj Tipi

Through Hole

Seri

HEXFET®

Direnç

11MOhm

Parça Durumu

Active

Terminal Sayısı

3

Power Dissipation Max

180W Tc

Drain To Source Breakdown Voltage

55V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

3210pF @ 25V

Gate To Source Voltage Vgs

20V

Yayın Yılı

2001

Vgsth Max Id

4V @ 250μA

Kurşunsuz

Contains Lead, Lead Free

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tube

Fall Time Typ

48 ns

Kılıf / Paket

TO-220-3

Genişlik

4.82mm

Rds On Max Id Vgs

11m Ω @ 43A, 10V

Vgs Max

±20V

Reach Svhc

No SVHC

Number Of Channels

1

Turn Off Delay Time

39 ns

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Max Junction Temperature Tj

175°C

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

290A

Number Of Elements

1

Turn On Delay Time

13 ns

Jedec95 Code

TO-220AB