Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain Currentmax Abs Id
- 75A
- Power Dissipation Max
- 200W Tc
- Drain To Source Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Direnç
- 12mOhm
- Terminal Sayısı
- 3
- Yayın Yılı
- 2001
- Vgsth Max Id
- 4V @ 250μA
- Ambalaj
- Tube
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 3210pF @ 25V
- Case Connection
- DRAIN
- Terminal
- Through Hole
- Lead Pitch
- 2.54mm
- Power Dissipation
- 170W
- Element Configuration
- Single
- Threshold Voltage
- 4V
- Pin Sayısı
- 3
- Seri
- HEXFET®
- Montaj Tipi
- Through Hole
- Transistor Element Material
- SILICON
- Uzunluk
- 10.668mm
- Rise Time
- 78ns
- Continuous Drain Current Id
- 84A
- Voltage Rated Dc
- 60V
- Contact Plating
- Tin
- Montaj
- Through Hole
- Dual Supply Voltage
- 60V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fabrika Tedarik Süresi
- 12 Weeks
- ECCN Kodu
- EAR99
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Akım Değeri
- 84A
- Nominal Vgs
- 4 V
- Current Continuous Drain Id25
- 84A Tc
- Transistor Application
- SWITCHING
- Gate Charge Qg Max Vgs
- 130nC @ 10V
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
In Stock
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors