IPZ60R070P6FKSA1

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

600V

Continuous Drain Current Id

53.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T4

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4.5V @ 1.72mA

Power Dissipation Max

391W Tc

Avalanche Energy Rating Eas

1136 mJ

Montaj Tipi

Through Hole

Terminal Sayısı

4

Ambalaj

Tube

ECCN Kodu

EAR99

Rds On Max Id Vgs

70m Ω @ 20.6A, 10V

Pulsed Drain Currentmax Idm

156A

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

53.5A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-4

Drainsource On Resistancemax

0.07Ohm

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

4750pF @ 100V

Seri

CoolMOS™ P6

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

100nC @ 10V