IPW90R1K2C3FKSA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Power Dissipation

83W

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn On Delay Time

70 ns

Max Dual Supply Voltage

900V

Continuous Drain Current Id

5.1A

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Vgs Max

±20V

Qualification Status

Not Qualified

Montaj

Through Hole

Turn Off Delay Time

400 ns

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Montaj Tipi

Through Hole

Terminal Sayısı

3

Ambalaj

Tube

ECCN Kodu

EAR99

Rds On Max Id Vgs

1.2 Ω @ 2.8A, 10V

Rise Time

20ns

Parça Durumu

Obsolete

Number Of Elements

1

Current Continuous Drain Id25

5.1A Tc

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

6 Weeks

Vgsth Max Id

3.5V @ 310μA

Fall Time Typ

40 ns

Power Dissipation Max

83W Tc

Avalanche Energy Rating Eas

68 mJ

Pin Sayısı

3

Input Capacitance Ciss Max Vds

710pF @ 100V

Kurşunsuz Kodu

yes