IPW80R280P7XKSA1

Specifications

Rds On Max Id Vgs

280m Ω @ 7.2A, 10V

ECCN Kodu

EAR99

Ambalaj

Tube

Montaj Tipi

Through Hole

Terminal Sayısı

3

Drain To Source Voltage Vdss

800V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2013

Current Continuous Drain Id25

17A Tc

Number Of Elements

1

Parça Durumu

Active

Pulsed Drain Currentmax Idm

45A

Vgsth Max Id

3.5V @ 360μA

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

43 mJ

Power Dissipation Max

101W Tc

Gate Charge Qg Max Vgs

36nC @ 10V

Seri

CoolMOS™

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

1200pF @ 500V

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.28Ohm

JESD-609 Kodu

e3

Yüzey Montaj

NO

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

800V

Nem Hassasiyeti (MSL)

Not Applicable

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Vgs Max

±20V

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Fet Feature

Super Junction