IPW65R660CFDFKSA1

Specifications

Gate To Source Voltage Vgs

20V

Power Dissipation

62.5W

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

6A

Max Dual Supply Voltage

650V

Turn On Delay Time

9 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain Currentmax Abs Id

6A

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Turn Off Delay Time

40 ns

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Qualification Status

Not Qualified

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Drain To Source Voltage Vdss

700V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

6A Tc

Number Of Elements

1

Parça Durumu

Obsolete

Rise Time

8ns

Ambalaj

Tube

Rds On Max Id Vgs

660m Ω @ 2.1A, 10V

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Terminal Sayısı

3

Power Dissipation Max

62.5W Tc

Fall Time Typ

10 ns

Fabrika Tedarik Süresi

16 Weeks

Vgsth Max Id

4.5V @ 200μA

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

22nC @ 10V

Pin Sayısı

3