IPW65R190CFDAFKSA1

Specifications

Gate To Source Voltage Vgs

30V

Transistor Element Material

SILICON

Turn On Delay Time

12 ns

Max Dual Supply Voltage

650V

Continuous Drain Current Id

17.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

Transistor Application

SWITCHING

Vgs Max

±20V

Uzunluk

16.03mm

Yükseklik

21.1mm

Turn Off Delay Time

53.2 ns

Parça Durumu

Last Time Buy

Number Of Elements

1

Current Continuous Drain Id25

17.5A Tc

Pulsed Drain Currentmax Idm

57.2A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2012

Çalışma Sıcaklığı

-40°C~150°C TJ

Terminal Sayısı

3

Montaj Tipi

Through Hole

Rds On Max Id Vgs

190m Ω @ 7.3A, 10V

Ambalaj

Tube

Avalanche Energy Rating Eas

484 mJ

Power Dissipation Max

151W Tc

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4.5V @ 700μA

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

1850pF @ 100V

Kurşunsuz Kodu

yes

Seri

Automotive, AEC-Q101, CoolMOS™

Pin Sayısı

3

Genişlik

5.16mm

Gate Charge Qg Max Vgs

68nC @ 10V