IPW65R110CFDFKSA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn On Delay Time

16 ns

Max Dual Supply Voltage

650V

Continuous Drain Current Id

31.2A

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Vgs Max

±20V

Qualification Status

Not Qualified

Montaj

Through Hole

Turn Off Delay Time

68 ns

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Montaj Tipi

Through Hole

Terminal Sayısı

3

Ambalaj

Tube

Rds On Max Id Vgs

110m Ω @ 12.7A, 10V

Pulsed Drain Currentmax Idm

99.6A

Rise Time

11ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

31.2A Tc

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4.5V @ 1.3mA

Power Dissipation Max

277.8W Tc

Fall Time Typ

6 ns

Avalanche Energy Rating Eas

845 mJ

Pin Sayısı

3

Seri

CoolMOS™

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

3240pF @ 100V