Volume pricing
- 1+ pcs$4.81
- 10+ pcs$4.53
- 100+ pcs$4.28
- 500+ pcs$4.04
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 38A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 10.6 ns
- Max Dual Supply Voltage
- 650V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- Power Dissipation
- 278W
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fet Type
- N-Channel
- Terminal Pozisyonu
- SINGLE
- Terminal Kaplaması
- Tin (Sn)
- Turn Off Delay Time
- 77 ns
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- Kurşunsuz
- Lead Free
- Jesd30 Code
- R-PSFM-T3
- RoHS Durumu
- ROHS3 Compliant
- Avalanche Energy Rating Eas
- 845 mJ
- Fall Time Typ
- 6 ns
- Power Dissipation Max
- 278W Tc
- Vgsth Max Id
- 3.5V @ 1.2mA
- Fabrika Tedarik Süresi
- 12 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2008
- Rise Time
- 9ns
- Parça Durumu
- Not For New Designs
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 38A Tc
- Rds On Max Id Vgs
- 99m Ω @ 12.8A, 10V
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e3
- Drainsource On Resistancemax
- 0.099Ohm
- Kılıf / Paket
- TO-247-3
- Operating Mode
- ENHANCEMENT MODE
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