IPW65R080CFDAFKSA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Çalışma Sıcaklığı

-40°C~150°C TJ

Rise Time

18ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

43.3A Tc

Rds On Max Id Vgs

80m Ω @ 17.6A, 10V

ECCN Kodu

EAR99

Ambalaj

Tube

Terminal Sayısı

3

Montaj Tipi

Through Hole

Power Dissipation Max

391W Tc

Fall Time Typ

6 ns

Vgsth Max Id

4.5V @ 1.76mA

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

161nC @ 10V

Seri

Automotive, AEC-Q101, CoolMOS™

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

4440pF @ 100V

Pin Sayısı

3

Drainsource On Resistancemax

0.08Ohm

JESD-609 Kodu

e3

Kılıf / Paket

TO-247-3

Additional Feature

HIGH RELIABILITY

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

43.3A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

20 ns

Max Dual Supply Voltage

650V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

650V

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel