IPW65R070C6FKSA1

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

53.5A

Max Dual Supply Voltage

650V

Turn On Delay Time

17 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

90 ns

Montaj

Through Hole

Vgs Max

±20V

Transistor Application

SWITCHING

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

391W Tc

Fall Time Typ

6 ns

Vgsth Max Id

3.5V @ 1.76mA

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Current Continuous Drain Id25

53.5A Tc

Number Of Elements

1

Parça Durumu

Not For New Designs

Rds On Max Id Vgs

70m Ω @ 17.6A, 10V

ECCN Kodu

EAR99

Ambalaj

Tube

Montaj Tipi

Through Hole

Terminal Sayısı

3

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.07Ohm

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Gate Charge Qg Max Vgs

170nC @ 10V

Seri

CoolMOS™

Kurşunsuz Kodu

yes