IPW65R048CFDAFKSA1

Specifications

Power Dissipation

500W

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

63.3A

Turn On Delay Time

22 ns

Max Dual Supply Voltage

650V

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Jesd30 Code

R-PSFM-T3

Turn Off Delay Time

85 ns

Montaj

Through Hole

Vgs Max

±20V

Transistor Application

SWITCHING

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

48m Ω @ 29.4A, 10V

Ambalaj

Tube

Montaj Tipi

Through Hole

Terminal Sayısı

3

Yayın Yılı

2008

Çalışma Sıcaklığı

-40°C~150°C TJ

Current Continuous Drain Id25

63.3A Tc

Number Of Elements

1

Parça Durumu

Active

Rise Time

10ns

Pulsed Drain Currentmax Idm

228A

Vgsth Max Id

4.5V @ 2.9mA

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

4 ns

Power Dissipation Max

500W Tc

Radyasyon Dayanımı

No

Pin Sayısı

3

Gate Charge Qg Max Vgs

270nC @ 10V

Input Capacitance Ciss Max Vds

7440pF @ 100V

Kurşunsuz Kodu

yes

Seri

Automotive, AEC-Q101, CoolMOS™

Kılıf / Paket

TO-247-3