IPW65R037C6FKSA1

Specifications

Transistor Element Material

SILICON

Power Dissipation

500W

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

83.2A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

22 ns

Max Dual Supply Voltage

650V

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Turn Off Delay Time

140 ns

Montaj

Through Hole

Transistor Application

SWITCHING

Vgs Max

±20V

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Rds On Max Id Vgs

37m Ω @ 33.1A, 10V

ECCN Kodu

EAR99

Ambalaj

Tube

Montaj Tipi

Through Hole

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

32ns

Parça Durumu

Not For New Designs

Number Of Elements

1

Current Continuous Drain Id25

83.2A Tc

Pulsed Drain Currentmax Idm

297A

Vgsth Max Id

3.5V @ 3.3mA

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation Max

500W Tc

Fall Time Typ

7 ns

Pin Sayısı

3

Pin Sayısı

3

Gate Charge Qg Max Vgs

330nC @ 10V

Seri

CoolMOS™ C6