IPW60R250CP

Specifications

Continuous Drain Current Id

12A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Power Dissipation

104W

Terminal Kaplaması

TIN

Fet Type

N-Channel

Transistor Application

SWITCHING

Vgs Max

±20V

Qualification Status

Not Qualified

Drain To Source Breakdown Voltage

600V

RoHS Durumu

RoHS Compliant

Power Dissipation Max

104W Tc

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

3.5V @ 440μA

Pulsed Drain Currentmax Idm

40A

Parça Durumu

Obsolete

Number Of Elements

1

Current Continuous Drain Id25

12A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2011

Drain To Source Voltage Vdss

650V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Sayısı

3

Montaj Tipi

Through Hole

Ambalaj

Tube

ECCN Kodu

EAR99

Rds On Max Id Vgs

250m Ω @ 7.8A, 10V

Yüzey Montaj

NO

Drainsource On Resistancemax

0.25Ohm

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Nominal Vgs

3 V

Input Capacitance Ciss Max Vds

1200pF @ 100V

Seri

CoolMOS™

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

35nC @ 10V