IPW60R180P7XKSA1

Specifications

Terminal Sayısı

3

Montaj Tipi

Through Hole

Ambalaj

Tube

ECCN Kodu

EAR99

Rds On Max Id Vgs

180m Ω @ 5.6A, 10V

Pulsed Drain Currentmax Idm

53A

Current Continuous Drain Id25

18A Tc

Number Of Elements

1

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2017

Drain To Source Voltage Vdss

650V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4V @ 280μA

Power Dissipation Max

72W Tc

Avalanche Energy Rating Eas

56 mJ

Seri

CoolMOS™ P7

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

1081pF @ 400V

Gate Charge Qg Max Vgs

25nC @ 10V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Yüzey Montaj

NO

Drainsource On Resistancemax

0.18Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Transistor Application

SWITCHING

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel