IPW60R180C7XKSA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

600V

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Drain Currentmax Abs Id

13A

Transistor Application

SWITCHING

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Through Hole

Terminal Sayısı

3

Rds On Max Id Vgs

180m Ω @ 5.3A, 10V

ECCN Kodu

EAR99

Ambalaj

Tube

Current Continuous Drain Id25

13A Tc

Number Of Elements

1

Parça Durumu

Active

Pulsed Drain Currentmax Idm

45A

Drain To Source Voltage Vdss

600V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 260μA

Fabrika Tedarik Süresi

18 Weeks

Avalanche Energy Rating Eas

53 mJ

Power Dissipation Max

68W Tc

Seri

CoolMOS™ C7

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

1080pF @ 400V

Gate Charge Qg Max Vgs

24nC @ 10V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Yüzey Montaj

NO

Drainsource On Resistancemax

0.18Ohm