Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 75nC @ 10V
- Seri
- CoolMOS™
- Kurşunsuz Kodu
- yes
- Input Capacitance Ciss Max Vds
- 1660pF @ 100V
- Kılıf / Paket
- TO-247-3
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 160m Ω @ 11.3A, 10V
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2008
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Current Continuous Drain Id25
- 23.8A Tc
- Number Of Elements
- 1
- Parça Durumu
- Not For New Designs
- Pulsed Drain Currentmax Idm
- 70A
- Vgsth Max Id
- 3.5V @ 750μA
- Drive Voltage Max Rds On Min Rds On
- 10V
- Avalanche Energy Rating Eas
- 497 mJ
- Fall Time Typ
- 8 ns
- Power Dissipation Max
- 176W Tc
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Turn Off Delay Time
- 96 ns
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Terminal Pozisyonu
- SINGLE
- Terminal Kaplaması
- Tin (Sn)
- Transistor Element Material
- SILICON
- Power Dissipation
- 176W
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Gate To Source Voltage Vgs
- 20V
- Continuous Drain Current Id
- 23.8A
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