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Specifications
- Avalanche Energy Rating Eas
- 708 mJ
- Power Dissipation Max
- 208W Tc
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 3.5V @ 1.1mA
- Rise Time
- 5ns
- Parça Durumu
- Not For New Designs
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 25A Tc
- Pulsed Drain Currentmax Idm
- 82A
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2011
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 125m Ω @ 16A, 10V
- Ambalaj
- Tube
- Akım Değeri
- 25A
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- 600V
- Operating Mode
- ENHANCEMENT MODE
- Kılıf / Paket
- TO-247-3
- Input Capacitance Ciss Max Vds
- 2500pF @ 100V
- Seri
- CoolMOS™
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 70nC @ 10V
- Pin Sayısı
- 3
- Turn On Delay Time
- 15 ns
- Max Dual Supply Voltage
- 600V
- Continuous Drain Current Id
- 25A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Gate To Source Voltage Vgs
- 20V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Power Dissipation
- 208W
- Fet Type
- N-Channel
- Terminal Pozisyonu
- SINGLE
- Terminal Kaplaması
- Tin (Sn)
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