IPW60R099P7XKSA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

600V

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2014

Current Continuous Drain Id25

31A Tc

Parça Durumu

Active

Number Of Elements

1

Pulsed Drain Currentmax Idm

100A

ECCN Kodu

EAR99

Rds On Max Id Vgs

99m Ω @ 10.5A, 10V

Ambalaj

Tube

Terminal Sayısı

3

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

105 mJ

Power Dissipation Max

117W Tc

Vgsth Max Id

4V @ 530μA

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

45nC @ 10V

Seri

CoolMOS™ P7

Input Capacitance Ciss Max Vds

1952pF @ 400V

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.099Ohm

Yüzey Montaj

NO

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PSFM-T3

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Vgs Max

±20V