Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 800 mJ
- Power Dissipation Max
- 255W Tc
- Vgsth Max Id
- 3.5V @ 1.2mA
- Fabrika Tedarik Süresi
- 18 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2010
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Rise Time
- 5ns
- Parça Durumu
- Active
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 31A Tc
- Rds On Max Id Vgs
- 105m Ω @ 18A, 10V
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- Drainsource On Resistancemax
- 0.105Ohm
- JESD-609 Kodu
- e3
- Kılıf / Paket
- TO-247-3
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 80nC @ 10V
- Seri
- Automotive, AEC-Q101, CoolMOS™
- Kurşunsuz Kodu
- yes
- Input Capacitance Ciss Max Vds
- 2800pF @ 100V
- Pin Sayısı
- 3
- Continuous Drain Current Id
- 31A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 10 ns
- Max Dual Supply Voltage
- 600V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fet Type
- N-Channel
- Terminal Pozisyonu
- SINGLE
- Terminal Kaplaması
- Tin (Sn)
- Turn Off Delay Time
- 60 ns
- Qualification Status
- Not Qualified
- Montaj
- Through Hole
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