IPW60R080P7XKSA1

Specifications

Seri

CoolMOS™ P7

Input Capacitance Ciss Max Vds

2180pF @ 400V

Gate Charge Qg Max Vgs

51nC @ 10V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Yüzey Montaj

NO

Drainsource On Resistancemax

0.08Ohm

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Terminal Sayısı

3

Ambalaj

Tube

Rds On Max Id Vgs

80m Ω @ 11.8A, 10V

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

110A

Current Continuous Drain Id25

37A Tc

Parça Durumu

Active

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2014

Drain To Source Voltage Vdss

600V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4V @ 590μA

Power Dissipation Max

129W Tc

Avalanche Energy Rating Eas

118 mJ

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Jesd30 Code

R-PSFM-T3

Vgs Max

±20V

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)