Volume pricing
- 1+ pcs$8.88
- 10+ pcs$8.38
- 100+ pcs$7.90
- 500+ pcs$7.45
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 39A
- Max Dual Supply Voltage
- 600V
- Turn On Delay Time
- 40 ns
- Gate To Source Voltage Vgs
- 20V
- Power Dissipation
- 313W
- Transistor Element Material
- SILICON
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Terminal Pozisyonu
- SINGLE
- Fet Type
- N-Channel
- Terminal Kaplaması
- Tin (Sn)
- Turn Off Delay Time
- 110 ns
- Montaj
- Through Hole
- Vgs Max
- ±20V
- Transistor Application
- SWITCHING
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation Max
- 313W Tc
- Fall Time Typ
- 7 ns
- Vgsth Max Id
- 3.5V @ 1.7mA
- Fabrika Tedarik Süresi
- 52 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Voltage Vdss
- 650V
- Yayın Yılı
- 2008
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Current Continuous Drain Id25
- 39A Tc
- Number Of Elements
- 1
- Parça Durumu
- Not For New Designs
- Rise Time
- 17ns
- Rds On Max Id Vgs
- 75m Ω @ 26A, 10V
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e3
- Drainsource On Resistancemax
- 0.075Ohm
- Kılıf / Paket
- TO-247-3
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 116nC @ 10V
- Input Capacitance Ciss Max Vds
- 4000pF @ 100V
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