IPW60R070P6XKSA1

Specifications

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Turn Off Delay Time

64 ns

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn On Delay Time

23 ns

Max Dual Supply Voltage

600V

Continuous Drain Current Id

53.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Halogen Free

Halogen Free

Gate To Source Voltage Vgs

30V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-247-3

Drainsource On Resistancemax

0.07Ohm

JESD-609 Kodu

e3

Seri

CoolMOS™ P6

Input Capacitance Ciss Max Vds

4750pF @ 100V

Gate Charge Qg Max Vgs

100nC @ 10V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4.5V @ 1.72mA

Power Dissipation Max

391W Tc

Fall Time Typ

4 ns

Montaj Tipi

Through Hole

Terminal Sayısı

3

Ambalaj

Tube

Rds On Max Id Vgs

70m Ω @ 20.6A, 10V

Pulsed Drain Currentmax Idm

156A

Rise Time

15ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

53.5A Tc