IPW60R060P7XKSA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2014

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

48A Tc

ECCN Kodu

EAR99

Rds On Max Id Vgs

60m Ω @ 15.9A, 10V

Ambalaj

Tube

Terminal Sayısı

3

Max Junction Temperature Tj

150°C

Montaj Tipi

Through Hole

Power Dissipation Max

164W Tc

Vgsth Max Id

4V @ 800μA

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

67nC @ 10V

Input Capacitance Ciss Max Vds

2895pF @ 400V

Seri

CoolMOS™ P7

Drainsource On Resistancemax

0.06Ohm

JESD-609 Kodu

e3

Yüzey Montaj

NO

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Power Dissipation

164W

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

48A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

23 ns

Number Of Channels

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain To Source Breakdown Voltage

600V

Jesd30 Code

R-PSFM-T3

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)