IPW60R060C7XKSA1

Specifications

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.06Ohm

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

68nC @ 10V

Input Capacitance Ciss Max Vds

2850pF @ 400V

Kurşunsuz Kodu

yes

Seri

CoolMOS™ C7

Power Dissipation Max

162W Tc

Avalanche Energy Rating Eas

159 mJ

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4V @ 800μA

Drive Voltage Max Rds On Min Rds On

10V

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

35A Tc

Number Of Elements

1

Parça Durumu

Active

Ambalaj

Tube

Rds On Max Id Vgs

60m Ω @ 15.9A, 10V

Terminal Sayısı

3

Montaj Tipi

Through Hole

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Vgs Max

±20V

Transistor Application

SWITCHING

Montaj

Through Hole

Kurşunsuz

Lead Free

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

35A

Max Dual Supply Voltage

600V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Halogen Free

Halogen Free

Configuration

SINGLE WITH BUILT-IN DIODE