IPW60R045CPAFKSA1

Specifications

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

60A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Dual Supply Voltage

600V

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Turn Off Delay Time

100 ns

Yükseklik

25.4mm

Vgs Max

±20V

Transistor Application

SWITCHING

Rds On Max Id Vgs

45m Ω @ 44A, 10V

Max Junction Temperature Tj

150°C

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

60A Tc

Parça Durumu

Active

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

3.5V @ 3mA

Fall Time Typ

10 ns

Pin Sayısı

3

Input Capacitance Ciss Max Vds

6800pF @ 100V

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Power Dissipation

431W

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn On Delay Time

30 ns

Number Of Channels

1

Drain To Source Breakdown Voltage

600V

Kurşunsuz

Lead Free

Qualification Status

Not Qualified

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Ambalaj

Tube

Terminal Sayısı

3

Yayın Yılı

2010

Çalışma Sıcaklığı

-40°C~150°C TJ