IPW60R041P6FKSA1

Specifications

Gate To Source Voltage Vgs

30V

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

77.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

29 ns

Max Dual Supply Voltage

600V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

90 ns

Montaj

Through Hole

Transistor Application

SWITCHING

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

27ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

77.5A Tc

Pulsed Drain Currentmax Idm

267A

Rds On Max Id Vgs

41m Ω @ 35.5A, 10V

ECCN Kodu

EAR99

Ambalaj

Tube

Terminal Sayısı

3

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

1954 mJ

Power Dissipation Max

481W Tc

Fall Time Typ

5 ns

Vgsth Max Id

4.5V @ 2.96mA

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Gate Charge Qg Max Vgs

170nC @ 10V

Kurşunsuz Kodu

yes

Seri

CoolMOS™ P6