IPW60R037P7XKSA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Power Dissipation

255W

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Channels

1

Turn On Delay Time

22 ns

Continuous Drain Current Id

76A

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Jesd30 Code

R-PSFM-T3

Drain To Source Breakdown Voltage

600V

Vgs Max

±20V

Transistor Application

SWITCHING

Turn Off Delay Time

90 ns

Yükseklik

25.4mm

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Terminal Sayısı

3

Max Junction Temperature Tj

150°C

Montaj Tipi

Through Hole

Ambalaj

Tube

Rds On Max Id Vgs

37m Ω @ 29.5A, 10V

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

280A

Current Continuous Drain Id25

76A Tc

Number Of Elements

1

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2014

Drain To Source Voltage Vdss

650V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

18 Weeks

Vgsth Max Id

4V @ 1.48mA

Power Dissipation Max

255W Tc

Avalanche Energy Rating Eas

295 mJ

Input Capacitance Ciss Max Vds

5243pF @ 400V