Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz Kodu
- yes
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Yüzey Montaj
- NO
- Operating Mode
- ENHANCEMENT MODE
- Kılıf / Paket
- TO-247-3
- Pulsed Drain Currentmax Idm
- 495A
- Number Of Elements
- 1
- Parça Durumu
- Active
- Yayın Yılı
- 2013
- Drain To Source Voltage Vdss
- 650V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Max Junction Temperature Tj
- 150°C
- Terminal Sayısı
- 3
- ECCN Kodu
- EAR99
- Polaritychannel Type
- N-CHANNEL
- Avalanche Energy Rating Eas
- 582 mJ
- Fabrika Tedarik Süresi
- 18 Weeks
- Jesd30 Code
- R-PSFM-T3
- Drain To Source Breakdown Voltage
- 600V
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Terminal Formu
- THROUGH-HOLE
- Terminal Pozisyonu
- SINGLE
- Transistor Application
- SWITCHING
- Min. Çalışma Sıcaklığı
- -55°C
- Turn Off Delay Time
- 106 ns
- Yükseklik
- 25.4mm
- Maks. Çalışma Sıcaklığı
- 150°C
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Resistance
- 15mOhm
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation
- 446W
- Number Of Channels
- 1
- Turn On Delay Time
- 30 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 109A
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
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