IPW50R280CEFKSA1

Specifications

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Turn On Delay Time

8 ns

Max Dual Supply Voltage

500V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

13A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Fet Feature

Super Junction

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Turn Off Delay Time

40 ns

Pulsed Drain Currentmax Idm

42.9A

Current Continuous Drain Id25

13A Tc

Number Of Elements

1

Parça Durumu

Obsolete

Rise Time

6.4ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Terminal Sayısı

3

Ambalaj

Tube

Rds On Max Id Vgs

280m Ω @ 4.2A, 13V

Fall Time Typ

7.6 ns

Power Dissipation Max

92W Tc

Drive Voltage Max Rds On Min Rds On

13V

Fabrika Tedarik Süresi

52 Weeks

Vgsth Max Id

3.5V @ 350μA

Input Capacitance Ciss Max Vds

773pF @ 100V

Kurşunsuz Kodu

yes

Seri

CoolMOS™

Gate Charge Qg Max Vgs

32.6nC @ 10V

Pin Sayısı

3