IPW50R199CPFKSA1

Specifications

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

HTS Kodu

8541.29.00.95

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

500V

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Drain Currentmax Abs Id

17A

Jesd30 Code

R-PSFM-T3

Transistor Application

SWITCHING

Vgs Max

±20V

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Rds On Max Id Vgs

199m Ω @ 9.9A, 10V

Terminal Sayısı

3

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

compliant

Drain To Source Voltage Vdss

550V

Pulsed Drain Currentmax Idm

40A

Parça Durumu

Obsolete

Number Of Elements

1

Current Continuous Drain Id25

17A Tc

Fabrika Tedarik Süresi

8 Weeks

Vgsth Max Id

3.5V @ 660μA

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation Max

139W Tc

Avalanche Energy Rating Eas

436 mJ

Pin Sayısı

3

Gate Charge Qg Max Vgs

45nC @ 10V

Seri

CoolMOS™

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

1800pF @ 100V

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE