IPU80R1K4P7AKMA1

Specifications

Input Capacitance Ciss Max Vds

250pF @ 500V

Yayın Yılı

2013

Vgsth Max Id

3.5V @ 700μA

Transistor Element Material

SILICON

Continuous Drain Current Id

4A

Ds Breakdown Voltagemin

800V

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

4A Tc

JESD-609 Kodu

e3

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSIP-T3

Drain To Source Voltage Vdss

800V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Yüzey Montaj

NO

Montaj Tipi

Through Hole

Fet Feature

Super Junction

Fabrika Tedarik Süresi

18 Weeks

REACH Uyumluluk Kodu

not_compliant

Terminal Sayısı

3

Seri

CoolMOS™

Vgs Max

±20V

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

8 mJ

Gate Charge Qg Max Vgs

10.05nC @ 10V

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

ECCN Kodu

EAR99

Rds On Max Id Vgs

1.4 Ω @ 1.4A, 10V

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

32W Tc

Ambalaj

Tube

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Pulsed Drain Currentmax Idm

8.9A