IPT60R028G7XTMA1

Specifications

Yükseklik

2.4mm

Montaj Tipi

Surface Mount

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

288 mJ

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Seri

CoolMOS™ G7

Terminal Sayısı

3

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.028Ohm

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

4820pF @ 400V

Drain To Source Breakdown Voltage

600V

Jesd30 Code

R-PSSO-F3

Kılıf / Paket

8-PowerSFN

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Manufacturer Package Identifier

PG-HSOF-8

Rds On Max Id Vgs

28m Ω @ 28.8A, 10V

Power Dissipation

391W

Operating Mode

ENHANCEMENT MODE

Number Of Channels

1

Fabrika Tedarik Süresi

18 Weeks

Max Junction Temperature Tj

150°C

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

123nC @ 10V

Turn On Delay Time

28 ns

Number Of Elements

1

Continuous Drain Current Id

75A

Vgsth Max Id

4V @ 1.44mA

Yayın Yılı

2014

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Current Continuous Drain Id25

75A Tc

Turn Off Delay Time

100 ns